CH
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- TDS
- fTDS
TDS
fTDS(Thermal Desorption Spectroscopy for Semiconductor Wafer)
晶圆实时测量和诊断技术的发展建立在各种学术基础和极限技术的基础上，需要集成先进真空技术、杂质测量和诊断、超净环境维护、process control 和绘图等融合技术。
Specification
· Sample Description : ≤ Ø300 mm wafer
· Mass Range : (1 ~ 512) amu
· Full Heating : up to 950 ℃
· Local Heating : up to 1,400 ℃
· Base Pressure : *process chamber, 5 × 10-7 mbar / *measurement chamber, < 5 × 10-9 mbar
· DAQ System : automated fully, wafer loading to measurement through data analysis