The development of real-time wafer measurement and diagnostic technologies is founded on a diverse range of academic basics and cutting-edge techniques, demanding a sophisticated amalgamation and enhancement of technologies such as advanced vacuum technology, impurity measurement and diagnostics, ultra-clean environment maintenance, process control, and mapping.
· Sample Description : ≤ Ø300 mm wafer
· Mass Range : (1 ~ 512) amu
· Full Heating : up to 950 ℃
· Local Heating : up to 1,400 ℃
· Base Pressure : *process chamber, 5 × 10-7 mbar / *measurement chamber, < 5 × 10-9 mbar
· DAQ System : automated fully, wafer loading to measurement through data analysis